GaN-HEMT with a Back-Gated Segment for High Voltage Cascodes

Richard Reiner,Stefan Moench,Patrick Waltereit,Michael Basler,Stefan Müller,Michael Mikulla,Rüdiger Quay

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)（2023）

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摘要

This work presents the design, fabrication, and measurements of a GaN-HEMT with a back-gated segment and pull-down pin in a GaN-on-Si technology. The device is designed for the use in high voltage cascodes. The static and dynamic characteristics of the device is demonstrated in a three-stage hybrid cascode assembly. The cascode was measured with a blocking voltage up to 1250 V.

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关键词

GaN-on-Si,cascodes,cascades,stacking,back-gating,self-compatible transistor,multi-stage transistor circuit

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