Chrome Extension
WeChat Mini Program
Use on ChatGLM

Materials Enabled Memory Scaling and New Architectures

Zhijun Chen, Fred Fishburn, Chang Seok Kang, Sony Varghese,Bala Haran

2023 IEEE International Memory Workshop (IMW)(2023)

Cited 0|Views2
No score
Abstract
Both DRAM and NAND evolution over the last decade have come less and less from cell design changes and more from material changes to address higher aspect ratios with reduced feature size variation. We review key processes that have enabled density shrink for both core memory array and the peri transistor. The current shortcomings in scaling DRAM are highlighted and we outline new architectures powered by novel materials and process that overcome these.
More
Translated text
Key words
DRAM,3DNAND,Capacitor,Hard Mask,3DDRAM,High-k Metal Gate,Charge Trap Cut
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined