Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering

We fabricated and characterized IGZO-channel back-gated FeFET. It has been found that a Memory Window (MW) reading scheme based on reverse $I_{d}-V_{g}$ sweep can strongly attenuate the significant read disturb which affects the low- V t state. This instability of low- $\mathrm{V}_{\mathrm{t}}$ state origins from the asymmetric PV loop and small negative coercive voltage. With this optimized reading scheme, we proved that interfacial engineering, by inserting a $\mathrm{NbO}_{\mathrm{x}}$ layer between La HZO and IGZO, can significantly improve $2 P_{r}$, MW (to $0.7 \mathrm{~V}$), and endurance (to 10 ⁷ cycles). This makes the $\mathrm{La}: \mathrm{HZO} / \mathrm{NbO}_{\mathrm{x}} / \mathrm{IGZO}$ FeFET a promising structure for high-endurance and low-latency NVM.