Vertical Channel Transistor (VCT) As Access Transistor for Future 4F2 DRAM Architecture
Daohuan Feng, Yi Jiang,Yunsong Qiu,Yuhong Zheng, Harry Kim,Jaewoo Kim,Jian Chu,Guangsu Shao,Yucheng Liao, Chen Yang, Minrui Hu,Wenli Zhao, Linjiang Xia,Jianfeng Xiao,Di Ma, Yuan Cheng,Xiangbo Kong,Chao Lin,Tianming Li,Yongjie Li,Jingheng Meng,Kai Shao, Yan Wang,Xiaoan Yang, Xiang Liu,Qinghua Han,Huiming Li,Yanzhe Tang,Mingde Liu,Eric Wu,Xiaoping Li, Renrui Huang,Mingtang Zhang,Long Hou,Xuan Pan,Xinwen Jin,Shuiping Zhao,D. H. Han,Ted Park,Deyuan Xiao,Chao Zhao,Abraham Yoo 2023 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW（2023）
Key words
4F2 DRAM,VCT,transistor performance
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