Micro-transfer printed InGaAs photodetector on SOI platform

2023 IEEE Silicon Photonics Conference (SiPhotonics)(2023)

引用 0|浏览9
暂无评分
摘要
Transfer-printed InGaAs photodetectors are integrated on SOI by evanescent, grating and edge coupling, exhibiting responsivities of 0.7, 0.38 and 0.15 A/W, with dark currents of 48,47 and 400 nA at 0.6 V reverse bias respectively.
更多
查看译文
关键词
Photodetector, InGaAs, Transfer printing, heterogeneous integration
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要