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E波段GaAs PHEMT工艺有源六倍频器MMIC

CHEN Changyou,LIU Huidong,CUI Lu

Modern Informationn Technology（2023）

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Abstract
基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款输出频率在E波段的有源六倍频器微波单片集成电路(MMIC).片上集成六倍频器及输出驱动放大器,采用PHEMT管进行倍频,具有较高输出功率及较小的芯片尺寸.在片探针测试结果显示该倍频器芯片在输入功率 5 dBm时,输出 66～88 GHz频率范围内,输出功率大于 13 dBm,谐波抑制 20 dBc,功耗600 mW,芯片尺寸为3.0 mm×1.4 mm×0.07 mm.
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