Voltage-tunable dual-colour quantum Bragg mirror detector (QBMD)

The electronic quasi-bound state in the continuum concept is explored in an InGaAs/InAlAs heterostructure to create a voltage-tunable dual-colour quantum Bragg mirror detector. This heterostructure is based on one main quantum well embedded between two different superlattices. By bandgap engineering, each superlattice gives rise to quasi-bound states in the continuum with a preferential direction for electron extraction. Due to these states, the photovoltaic photocurrent presents a dual-colour response, one in a positive direction at 340 meV (3.6 .m), and one in a negative direction at 430 meV (2.9 .m). The simultaneous dual-colour detection can be switched to a single-colour detection (340 meV or 430 meV) by applying a bias voltage. At 77 K, the specific detectivity for simultaneous dual-colour is 2.5 center dot 108 Jones, while the single-colour detectivities are 2.6 center dot 109 Jones at +2.0 V and 7.7 center dot 108 Jones at -1.6 V for 340 meV and 430 meV, respectively.