Low Dit of $(2-4)\times 10^{10}$ using Y2 O3 /epi-Si/Ge Gate Stacks
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)(2023)
摘要
In this work, we have achieved record-low interfacial trap densities of
$(2-4) \times 10^{10}$
eV
−1
cm
−2
in the Y
2
O
3
/epi-Si/Ge(001) gate stacks, particularly low
$D_{it}$
less than
$1 \times 10^{11}$
eV
−1
cm
−2
near the conduction band region. Synchrotron radiation photoemission was used to probe the interfacial bonding with atomic hydrogen exposure to elucidate the effect of post-metallization annealing in forming gas. After exposure of atomic hydrogen at 400°C, a great reduction of GeO
x
and a great increase of SiO
x
formation, which is stabilized in Si
3+
states, suggest that the Y-O-Si formation attributed to the low
$D_{it}$
.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要