Low-temperature & high yield transfer approaches for embedding the 4th generation semiconductor Ga2O3 on the high thermal conductive substrate

$\beta-\text{Ga}_{2}\mathrm{O}_{3}$ has superior electrical properties for application in power electronics but only a moderate thermal conductivity. To maximize the performance of Ga 2 O 3 based electronics, an additional thermal management will be needed. In this work, we demonstrate the high-yield process of embedding thin-film Ga 2 O 3 with the use of graphene-based high thermal conductive adhesive $(\rho_{\mathrm{c}}=54\ \mathrm{W}/\text{mK})$ . The graphene-based adhesive provides good adhesion and thermal conduction path for the thermal management approach. More than 20 % reduction in operation temperature is observed by the renovation of transferred thin-film Ga 2 O 3 device structures and the adhesion and transfer procedure for large area integration of $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ .