A Kinetic Monte Carlo Simulation Study of WS2 RRAM with Different 2D Layer Thickness
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)（2023）
Abstract
A 2D RRAM made by WS2 with different active layer thickness has been studied including experiments and simulations. The physical parameters in the KMC model have been obtained through data calibration. The model has prediction power for I-V characteristics, retention time, and breakdown electric field for a WS2 RRAM with different 2D layer thickness. This work reveals fundamental differences between a 2D RRAM and a conventional oxide RRAM.
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Key words
WS2 RRAM,KMC,activation energy,retention time,breakdown electric field
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