Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge with Partial Recessed-Gate HEMTs
IEEE Transactions on Electron Devices（2023）
关键词
Crosstalk,GaN-on-SOI,half bridge,monolithic integration,partial recessed-gate high-electron-mobility transistors (HEMTs),RON deterioration,substrate biasing effect (SBE)
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