1400 V/240 mΩ增强型硅基p-GaN栅结构AlGaN/GaN HEMT 器件
Research & Progress of Solid State Electronics（2023）
Abstract
基于硅基p-GaN/AlGaN/GaN异质结材料结构,研制了一款横向结构的高压增强型GaN高电子迁移率晶体管(GaN HEMT)器件.通过采用自对准栅刻蚀与损伤修复技术以及低温无金欧姆合金工艺实现了较低的导通电阻,并借助于叠层介质钝化和多场板峰值抑制技术提升了器件的击穿特性.测试结果表明,所研制GaN器件的阈值电压为1.95 V(VGS=VDS,IDS=0.01 mA/mm),导通电阻为240 mΩ(VGS=6 V,VDS=0.5 V),击穿电压高于1 400 V(VGS=0 V,IDS=1 μA/mm),彰显了硅基p-GaN栅结构 AlGaN/GaN HEMT器件在 1 200 V等级高压应用领域的潜力.
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