Investigation of Ga₂O₃/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

Abstract In this paper, a Ga2O3/diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure has been proposed and simulated. The simulation is based on an optimized Ga2O3/diamond heterostructure TCAD physical model, which is revised by repeated comparison with the experimental data of the literature. Since both Ga2O3 and diamond are ultra-wide bandgap semiconductor materials, the Ga2O3/diamond SAM-APD shows good solar-blind detection ability, and the corresponding cut off wavelength is about 263nm. The doping distribution and the electric field distribution of the SAM-APD are discussed, the simulation results show that the gain of the designed device can reach 5×104 and the peak responsivity can reach a value as high as 78 A/W.