Physics-based bias-dependent compact modeling of 1/f noise in single- to few-layer 2D-FETs

Nikolaos Mavredakis,Anibal Pacheco-Sanchez,Md Hasibul Alam,Anton Guimerà-Brunet,Javier Martinez,Jose Antonio Garrido,Deji Akinwande,David Jiménez

Nanoscale（2023）

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摘要

A physics-based 1/f noise model, appropriate for circuit simulators, is for the first time proposed and experimentally validated for 2D-FETs. Extracted model parameters can lead to reliable comparisons between different 2D devices and dielectrics.

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