UV emission from MOVPE nanowire LEDs

The use of nanowires has recently emerged to go further in the development of nitride UV LEDs, especially to improve the efficiency or to make micro-sized UV-sources and flexible LEDs/photodetectors. Our current research interest is focused on the core-shell UV quantum wells grown by industrial MOVPE epitaxy tool. Several types of core-shell quantum wells have been successfully achieved: GaN/InAlN for UV-A, GaN/AlGaN or AlGaN/AlGaN for UV-A and UV-B. When the UV GaN/AlGaN QWs are embedded in a core-shell AlGaN p-n junction, the electroluminescence is demonstrated on single-wire mu LEDs in the UV-A and UV-B. The further development of core-shell GaN/AlGaN monolayered system is also shown with demonstration of UV-B emission for single-wire mu LEDs.