Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al$_{\text{2}}$O$_{\text{3}}$ DepositionJiangwei Liu,Tokuyuki Teraji,Bo Da,Yasuo KoideIEEE Transactions on Electron Devices（2023）引用 0|浏览4暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
