The Mechanism of a Film-Forming Medium during the RF Deposition of Ferroelectric Ceramics of the Ba x Sr 1–x TiO 3 Composition

Russian Microelectronics(2023)

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Abstract
This paper considers the mechanism of the formation of a film-forming medium during the RF deposition of films of barium strontium titanate (Ba x Sr 1– x TiO 3 ) in oxygen. The mass spectra of the film-forming medium shows that upon sputtering Ba x Sr 1– x TiO 3 in oxygen plasma, the energy of oxygen ions 10 –17 –10 –16 J is sufficient for the transfer of polyatomic molecules from the surface to the gas phase and is insufficient for the destruction of the molecule into its constituent components both in the target substance and in the gas phase. The dynamics of the formation of a film-forming medium during the deposition of Ba 0.8 Sr 0.2 TiO 3 films is shown. The parameters of the RF discharge and the conditions and regimes necessary for the reproducible growth of Ba x Sr 1– x TiO 3 films are established.
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Key words
ferroelectric ceramics,rf deposition,film-forming
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