Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers

S. A. Blokhin, A. V. Babichev, A. G. Gladyshev,L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin,M. A. Bobrov,N. A. Maleev, A. G. Kuzmenkov,A. M. Nadtochiy, V. N. Nevedomskiy, V. V. Andryushkin, S. S. Rochas, D. V. Denisov, K. O. Voropaev, I. O. Zhumaeva,V. M. Ustinov,A. Yu. Egorov, V. E. Bougrov

Technical Physics（2024）

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摘要

X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular beam epitaxy. It is shown that the grown heterostructures have a high crystal quality. The perpendicular lattice mismatch of the average crystal lattice constant of the InGaAs/InAlGaAs superlattice with respect to the crystal lattice constant of the InP substrate is estimated at +0.01

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关键词

superlattice,vertical-cavity surface-emitting laser,optical gain

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