MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates: comparative analysis

In this work, InGaN nanowires with a high In content were grown, for the first time on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGaN nanowires and creating optoelectronic devices in the visible spectral range. Keywords: InGaN, nanowires, molecular beam epitaxy, SiC/Si, morphological properties, optical properties, miscibility gap, silicon carbide on silicon