MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1)

T.J. Wade,A. Gundimeda,M.J. Kappers,M. Frentrup,S.M. Fairclough,D.J. Wallis,R.A. Oliver

Journal of Crystal Growth（2023）

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摘要

•Cubic zincblende GaN films were grown by MOVPE on 3C-SiC/Si (001) templates.•The samples were characterized using DIC optical microscopy, AFM, XRD, and STEM.•The GaN epilayer growth temperature and gas-phase V/III-ratio were varied.•A narrow growth window for high phase purity zincblende GaN epilayer was identified.

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关键词

A1. Atomic force microscopy,A1. X-ray diffraction,A1. Scanning-transmission electron microscopy,A1. Phase purity,A3. Metalorganic vapour-phase epitaxy,B1. Cubic zincblende GaN

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