Reduction of nonradiative recombination for high-power 808 nm laser diode adopting InGaAsP/InGaAsP/GaAsP active region

Reducing nonradiative recombination is a key problem to achieving high-power laser diode. InGaAsP/InGaAsP/GaAsP active region was designed so as to increase injection efficiency and decrease leakage currents which corresponds to a lower nonradiative recombination. The simulation results showed that the out-put power of 15.59 W and the wall-plug efficiency of 78.95% were obtained for the InGaAsP/InGaAsP/GaAsP active region laser at injection current density 6 kA/cm2 at room temperature of 25 degrees C by improved carrier injection efficiency. Meanwhile, the temperature drift coefficient of 0.217 nm/degrees C was obtained for the peak wavelength of InGaAsP/InGaAsP/GaAsP active region laser at the temperature range from 5 to 65 degrees C. The designed InGaAsP/InGaAsP/GaAsP active region structure is an effective way to reduce the nonradiative recombination loss for achieving high-power laser diode.