Physics-Based SPICE Modeling of Dynamic on-State Resistance of p-GaN HEMTs

This letter introduces a new physics-based SPICE modeling method for the dynamic on -state resistance ( R _on,dy ) of gallium nitride based p-type gate power high electron mobility transistors (p-GaN HEMTs). To describe the continuous variations of R _on,dy , a time-resolved electron mobility variation (Δ μ _eff ) model is proposed. Physical parameters including activation energy and voltage acceleration factor of traps in p-GaN HEMTs are extracted as the model parameters. Then, to achieve the goal of simulating R _on,dy , the proposed Δ μ _eff model is incorporated into the surface potential based advanced SPICE model for GaN HEMT. Simulative results prove the proposed models can predict the R _on,dy induced power loss.