新型单相低能耗半桥逆变器
Acta Electronica Sinica(2023)
Abstract
为实现单相半桥逆变器的高效率运行,设计了一种新型单相低能耗半桥逆变器.在逆变器工作过程中,主开关和辅助开关均能完成零电压软切换,逆变器主开关采用高频金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)时,都能实现零损耗切换,消除了MOSFET内部结电容导致的容性开通损耗.文中具体分析了电路工作过程.在额定功率为1kW样机上的实验结果表明开关器件都实现了软切换.因此该半桥软开关逆变器拓扑结构对于提高逆变器的性能具有重要意义.
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Key words
inverter,half-bridge,low-energy,zero-voltage switching,high-efficiency
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