Fin Reveal RIE Process Investigation

ChunPui Kwan,Hongliang Shen,Edward Reis, Cassidy Dineen, Tu Q. Nguyen,Lillian Li, Yevgeny Lifshitz, Robert Brown, Lan Yang,Xiaoli He,James Chen

2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)（2023）

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Abstract

Oxide selectivity at Fin reveal dry etching is studied by varying the CxFy gas flow and etch time. Defectivity and yield of the resulting FinFET devices are compared. Also, a new detection method is evaluated for early warnings of defects due to oxide selectivity. Such learning may improve the efficiency of enhanced performance FinFET devices and reduce fabrication cost.

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Key words

FinFET,Plasma Etch,RIE,Fin Reveal,Oxide Residue,Inline Detection

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