Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Abstract
In this work, parameter extraction methodology for the BSIM industry standard high-voltage (HV) device compact model is presented. An extraction procedure covers entire range of operation, including weak inversion to strong inversion region, low and high drain biases, and multiple body biases with temperature effects. The extraction procedure is validated with experimental and numerical simulation data for several configurations of HV devices, including geometric variations.
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Key words
Resistance,Logic gates,Voltage,Parameter extraction,Semiconductor device modeling,Doping,Semiconductor process modeling,BSIM-BULK,parameter extraction,quasi-saturation,semiconductor device modeling,velocity saturation
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