Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of similar to 10(9), a near-unity ideality factor of 1.03, and a barrier height of similar to 0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.