Band Alignment and Photoresponse of LaFeO3-Based Heterojunctions

Epitaxial LaFeO3 (LFO)-based photocells, of different thicknesses (50-200 nm) have been grown on cubic LSAT (001) [(LaAlO3)0.3(Sr2TaAlO6)0.7] single-crystal substrates, using a La2/3Sr1/3MnO3 (LSMO) bottom electrode and different top electrodes [Pt, Ba0.95La0.05SnO3 (BLSO)], to determine their photoresponse. The measured short-circuit photocurrent first increases with LFO thickness and then decreases, and it is larger or smaller, when Pt or BLSO electrodes are used, respectively. The correspond-ing open-circuit voltage displays the opposite trend, being smaller or larger for Pt and BLSO, respectively, which is in excellent agreement with the electronic band alignments determined by x-ray photoelectron spectroscopy and also consistent with the rectifying character of the dark current-voltage data. It turns out that the films display a complex microstructure containing different variants, strained and relaxed, of the orthorhombic LaFeO3, that evolves with film thickness and entails the presence of strain gradients and, possibly, flexoelectric fields. We discuss these data and propose that the unavoidable grain bound-aries between differently textured LaFeO3 crystallites play a significant role on the observed responsivity (2.6 x 10-4 A W-1), found to be larger than in related LFO-based structures.