Analysis of Self-Bias Current Reference with BJT and its Application in Flipped Voltage Follower

In this paper, complete analysis of temperature compensated self-bias current reference (SBCR) with BJT has been done. This circuit is capable of generating temperature insensitive low currents in microampere range. This current reference is designed using first-order temperature-compensated MOS current reference and a BJT. It possesses simple structure, consumes low power and achieves high temperature insensitivity. The presented current reference has been simulated by TSMC model for 180 nm technology with the help of Mentor Graphics EldoSpice tool. For simulations, a supply voltage of 1.5 V has been used and power dissipated for 62.12 µA reference current has been observed to be 173.95 µW. Different values of reference currents have been obtained by varying aspect ratio of MOSFETs and/or supply voltage of the presented circuit. For a temperature range of − 30 °C to 100 °C, variations of only 2.2% have been observed in the presented SBCR. The robustness of the presented circuit against process parameters, supply voltage and temperature variations has been demonstrated using Monte Carlo, Corner and PVT analysis. A temperature insensitive flipped voltage follower has been designed using the presented SBCR.