Optoelectronic Switching Memory Based on ZnO Nanoparticle/ Polymer Nanocomposites

Optoelectronic switching memories are emerging as practical candidates for applications of optically tunable neuro-morphic computing systems and artificial vision systems. Here, we report on the fabrication of an optoelectronic switching memory device based on semiconducting zinc oxide nanoparticles (ZnO NPs) embedded within a photoactive azobenzene polymer. The device shows electronic resistive switching and a reversible optical switching effect upon changing the polarization of the applied light. Optical illumination with circularly/linearly polarized light expands/contracts the nanocomposite film and modifies the conduction pathway, facilitated by the presence of the ZnO NPs, as a semiconductor material within the insulating poly(disperse red 1 acrylate) material. The carrier transport and the operating switching mechanism are explained on the basis of the current-voltage (I-V) results. The reported device enables optical controllable resistive switching properties that may find applications in visual systems integrated within artificial intelligence networks.