Enhanced Polarization Effect of Flexible Magnetoelectric PVDF-TrFE/ Fe3O4 Smart Nanocomposites for Nonvolatile Memory Application

High power consumption of nonvolatile memory is a major challenge, as it reduces the memory efficiency of information storage devices. The magnetoelectric (ME) coupling in multiferroic nanocomposites, which can be utilized in magneto-electric random access memory, is an effective approach to reduce power consumption in information storage. Here, a type of ME nanocomposite embedded with 0.5 wt % Fe3O4 is presented, exhibiting higher ME voltage coefficients for piezoelectric thin films. Specifically, the ME voltage coefficient of the P(VDF-TrFE)/ Fe3O4 composite developed in this study is 8.97 mV/(cm center dot Oe), which is 17.5% higher compared to that of the pure P(VDF-TrFE) at a Hdc of 1000 Oe. Meanwhile, the enhanced ME effect of smart nanocomposites is characterized by the increase of diffraction peak intensity at a microscopic level. The nanocomposite films exhibit high ME voltage coefficients and information storage performance, providing a great potential for creating next-generation memory devices in the realm of artificial intelligence and wearable devices.