Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photoluminescence quenching were identified. We measured reflectivity spectra of the cavity structure which allowed us to verify the proposed layer design and its fabrication by comparing them with the results of simulations within the transfer matrix method.