Active inductors modelling and trade-offs reexamined

A model for active resonators based on active inductors implemented with gyrator-C structure is proposed. The model includes transcapacitive effects between the gyrator ports, needed for accurately modeling transistor level implementation in nanometer process. The main trade-offs (quality factor, noise, linearity) are visualized based on the model. The limits to maximum Q and strategies to decrease noise are shown and validated by simulation on a case study of a 50 Ω 2.4 GHz resonator on a 28 nm FD-SOI process that achieves less noise than its passive counterpart with a consumption of 2.1 mA from a 1 V power supply.