Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
arxiv(2023)
摘要
Fast measurements of quantum devices is important in areas such as quantum
sensing, quantum computing and nanodevice quality analysis. Here, we develop a
superconductor-semiconductor multi-module microwave assembly to demonstrate
charge state readout at the state-of-the-art. The assembly consist of a
superconducting readout resonator interfaced to a silicon-on-insulator (SOI)
chiplet containing quantum dots (QDs) in a high-κ nanowire transistor.
The superconducting chiplet contains resonant and coupling elements as well as
LC filters that, when interfaced with the silicon chip, result in a resonant
frequency f=2.12 GHz, a loaded quality factor Q=850, and a resonator
impedance Z=470 Ω. Combined with the large gate lever arms of SOI
technology, we achieve a minimum integration time for single and double QD
transitions of 2.77 ns and 13.5 ns, respectively. We utilize the assembly to
measure charge noise over 9 decades of frequency up to 500 kHz and find a 1/f
dependence across the whole frequency spectrum as well as a charge noise level
of 4 μeV/√(Hz) at 1 Hz. The modular microwave circuitry
presented here can be directly utilized in conjunction with other quantum
device to improve the readout performance as well as enable large bandwidth
noise spectroscopy, all without the complexity of superconductor-semiconductor
monolithic fabrication.
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