Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches

A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF 2D switches fabricated with hBN are described here by a equivalent circuit models. Straightforward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state, i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism. The highest mean relative error obtained between modeling and measurements of the return loss is of 7.6% with the approach presented here which overcomes the 42.5% of difference obtained with a previous model with an incomplete intrinsic device description.