Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
关键词
HEMTs,Logic gates,Indium phosphide,III-V semiconductor materials,Cryogenics,Transconductance,Qubit,Cryogenic,dc power,indium (In) channel content,InP high-electron mobility transistor (HEMT),low-noise amplifier (LNA),noise,quantum computer
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