Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors with HfO₂ Gate Dielectrics
IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2023）
关键词
1/f,border traps,carbon nanotube field-effect transistor (CNTFET),single-walled carbon nanotubes (SWCNTs),LFN,percolation,total ionizing dose (TID)
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