Atomic Layer Processing of MoS2
2023 IEEE Workshop on Microelectronics and Electron Devices (WMED)(2023)
摘要
Molybdenum disulfide (MoS
2
) is one of several transition metal dichalcogenides consisting of a layer of transition atoms sandwiched between layers of chalcogens.[l] Interest in MoS
2
has been driven by the fact that it exhibits a 1.8 e V direct electronic band gap in monolayer form and retains a moderate electron mobility (>10 cm
2
/Vs) even when only ∽6.5 Å (three atoms) thick. [2] These properties offer potential for retaining or improving speed and efficiency in scaled electronic devices.
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