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Influence of Interface Structure in the Active Region on Photoluminescence in InGaN/GaN Quantum Wells

Kaiju Shi,Chengxin Wang,Rui Li,Jianyang Deng, Haofeng Sun,Xiangang Xu,Ziwu Ji

Micro and Nanostructures（2023）

Cited 1|Views14
Key words
InGaN/GaN,Photoluminescence,Quasi-trapezoidal InGaN QWs,In diffusion,Composition gradient region
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