Deep NO oxidation in Zn2SnO4 by dual-anionic-defects engineering
Separation and Purification Technology（2023）
Abstract
•Zn2SnO4 with Br- doping and oxygen vacancies was obtained by a hydrothermal method.•Dual anionic active sites in Zn2SnO4 for NO photooxidation were identified.•High NO removal rate and low NO2 concentration were achieved.•The mechanism of deep NO photooxidation was proposed.
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Key words
Zn2SnO4, Oxygen vacancies, InterstitialBr-doping, DFT calculation, NO removal
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