Magnetoelectric coupling at room temperature in LaTiO3/SrTiO3 heterojunctions

A.Z. Simoes,P.P. Ortega,M.A. Ramirez,H. Moreno,C.M. Aldao,M.A. Ponce,F. Moura

Materials Research Bulletin（2023）

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摘要

•LTO/STO ME coupling derives from ferroelectric and magnetic domain coupling.•ME coupling arising from Ti-O-Ti explains VO⋅ under tensile strain/ Eext→.•Dielectric constant of multiferroics affected by LTO/STO ME coupling and film-substrate mismatch.

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关键词

Mott insulator,Multiferroic,Thin films,Chemical synthesis

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