N-Polar growth of nitride semiconductors with MOVPE and its applications

Takashi Matsuoka,Toshitsugu Mitate,Seiichiro Mizuno,Hiroko Takahata,Tomoyuki Tanikawa

Journal of Crystal Growth（2023）

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摘要

•Pointing out the importance of N-polar Growth of nitride semiconductors.•First explanation of N-polar GaN Growth mechanism on a sapphire substrate.•Description of how to obtain high-quality N-polar GaN.•Reviewing the applications of N-polar GaN Growth for devices.

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关键词

A1. Growth models,A3. Metalorganic vapor phase epitaxy,B1. Nitrides,B2. Semiconducting III-V materials,B3. High electron mobility transistors,B3. Solar cells

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