MOCVD growth and characterization of high efficiency (Al)InGaP solar cells for luminescent concentrators

Elisabetta Achilli,Marco Calicchio,Nicola Armani, Emanuele Malvisi,Filippo Annoni,Marina Cornelli,Franco Trespidi,Alessandro Minuto,Edoardo Celi,Giovanni Abagnale, Stefano Rizzi, Gianluca Timò

Journal of Crystal Growth（2023）

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摘要

•InGaP/AlInGaP top solar cells are successfully coupled to luminescent concentrators.•The introduction of Al in InGaP determines a blue-shift and a peak narrowing of EQE.•In AlInGaP cells for LSCs, EQE can be optimized by improving base contribution.•Base layer contribution to EQE is dominant if InGaP is replaced by AlInGaP.•MOCVD-grown III-V semiconductors coupled to LSCs are promising in BIPV.

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关键词

B3. Luminescent Solar Concentrators (LSCs),A3. Metal Organic Chemical Vapour Deposition (MOCVD),B2. III-V Semiconductor Materials,A1. Characterization,A1. Energy Gap,B3. Solar Cells

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