The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation

•The mc-Si ingots were produced in two furnaces: conventional and modified susceptor.•Temp & m/c interface shapes were compared at different growth fractions.•Optimized susceptor design shows better stress and dislocation distribution.•Modified susceptor grown ingot is of high quality by consuming less power.