4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor
Journal of Crystal Growth（2023）
Abstract
•4H-SiC trench filling experiments were conducted by chemical vapor deposition with the gas system of TCS:C2H4:H2.•Using the optimized process, the 8 μm deep 4H-SiC trenches with an aspect ratio of 3, were completely filled at a filling rate of 2.8 μm/h and acquired a flat end surface without void defects.
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Key words
A1. Characterization,A1. Defects,A3. Chemical vapor deposition processes,A3. Hot wall epitaxy,A3. Selective epitaxy,B2. Semiconducting materials
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