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Characterization of Unintentional Doping in Localized Epitaxial GaN Layers on Si Wafers by Scanning Spreading Resistance Microscopy

Thomas Kaltsounis,Helge Haas,Matthieu Lafossas,Simona Torrengo,Vishwajeet Maurya,Julien Buckley,Denis Mariolle,Marc Veillerot,Alain Gueugnot,Laurent Mendizabal,Yvon Cordier,Matthew Charles

MICROELECTRONIC ENGINEERING（2023）

Cited 5|Views21
Key words
Localized epitaxy,GaN-on-Si,Unintentional doping,Scanning spreading resistance microscopy
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