Magnetoelectric memory cell based on 0.5Ba(Zr0.2Ti0.8) O3-0.5Ba0.7Ca0.3TiO3/Fe65Co35 thin films

In this study, 0.5Ba(Zr0.2Ti0.8)O3-0.5Ba0.7Ca0.3TiO3(0.5BZT-0.5BCT) thin films were deposited on Pt/Ti/SiO2/Si substrate, and then small area Fe65Co35(FeCo) films were deposited on 0.5BZT-0.5BCT films. The hysteresis loops and piezoelectric curves of 0.5BZT-0.5BCT films were studied. The results show that the piezoelectric displacement of 0.5BZT-0.5BCT films is 63 angstrom, the residual polarization intensity is 2.76 mu C/cm2 and the coercive field is 110 kV/cm. 0.5BZT-0.5BCT/FeCo composite films exhibit typical magnetic hysteresis loops and stripe -like domains, the in-plane and out-of-plane coercivities are 10 Oe and 94 Oe, respectively, which indicates that the thin films have good soft magnetic properties. The current-voltage (I-V) curves of FeCo films on 0.5BZT-0.5BCT films were studied, the I-V behaviors of the thin films could be modulated by applying bias voltage, resulting in a resistance switching behavior. The maximum resistance change is 94% at 10 V bias voltage and 1 V scan voltage.