Design and simulation of GaN devices and integrated circuits using ASM compact HEMT model for mixed-signal applications

This paper introduces the usability of the GaN advanced spice model (ASM) structure in simulating the performance of the device and circuits. The GaN high electron mobility transistor (HEMT) model of the E-mode and the D-mode could be obtained by fitting the GaN metal-insulator-semiconductor (MIS) HEMT experimental characteristics. Then these two symbols are utilized for basic logic gates as NOT and NAND. Two drivers, direct-coupled FET logic (DCFL) and pseudo-complementary FET logic (PCFL) are designed in the GaN integrated circuits. This model can also work well in achieving the digital function of the shift register. The results show the convergence and accuracy of the models while demonstrating the potential of an all-GaN mixed-signal power conversion system.