High-Voltage A-Si TFTs Using Dual-Gate with a Common Gate Structure by Channel Electrons Concentration Regulation
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
Key words
High-voltage techniques,Thin film transistors,Electrodes,Logic gates,Electric breakdown,Resistance,Performance evaluation,Amorphous silicon (a-Si),channel electron concentration regulation,high voltage,thin-film transistors (TETs)
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