Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES（2023）
Key words
MODFETs,HEMTs,Gallium nitride,Logic gates,Semiconductor process modeling,Wide band gap semiconductors,Integrated circuit modeling,Gallium nitride (GaN),high-electron-mobility transistor (HEMT),intermodulation distortion,linear gain,modeling,N-polar,third-order intercept point
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