The Influence of Different Recombination Pathways on Hysteresis in Perovskite Solar Cells with Ion Migration

The impact of hysteresis on the power conversion efficiency (PCE) of perovskite solar cells (PSCs) still faces uncertainties despite the rapid development of perovskite photovoltaics. Although ion migration in perovskites is regarded as the chief culprit for hysteresis, charge carrier recombination pathways in PSCs are proposed to be necessary for the occurrence of hysteresis. Here, the impact of both bulk recombination and interface recombination on hysteresis in PSCs is investigated via drift-diffusion modeling. The simulation results demonstrate a direct correlation between recombination pathways and hysteresis in PSCs with ion migration. The simulation reveals that recombination pathways in PSCs will react to the variation in charge carrier distribution under different voltage scanning directions induced by ion migration in absorber layers, which leads to hysteresis in PSCs. Moreover, the hysteresis in normal (N-I-P) PSCs with different electron transport layers (ETLs) including sintered SnO2, SnO2 nano crystals and TiO2 is experimentally explored. The results demonstrate that multiple recombination pathways coupled with ion migration can lead to obvious hysteresis in fabricated PSCs which is consistent with simulation results. This work provides great insight into hysteresis management upon composition, additive and interface engineering in PSCs.